BSP296L6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Terminal Form :

Gull wing

Package :

Bulk

Operating Temperature :

-55°C ~ 150°C (TJ)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Dual

Manufacturer :

Infineon Technologies AG

Pulsed Drain Current-Max (IDM) :

4.4 A

Pin Count :

4

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Channel Type :

N

Power Dissipation-Max (Abs) :

1.79 W

Continuous Drain Current Id :

1.1

Gate Charge (Qg) (Max) @ Vgs :

17.2 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain-source On Resistance-Max :

0.7 Ω

JESD-609 Code :

e3

Supplier Device Package :

PG-SOT223

Rds On (Max) @ Id, Vgs :

700mOhm @ 1.1A, 10V

Power Dissipation (Max) :

1.79W (Ta)

Transistor Element Material :

SILICON

Product Status :

Active

Subcategory :

FET General Purpose Power

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

364 pF @ 25 V

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

1.1 A

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1.8V @ 400µA

FET Feature :

-

DS Breakdown Voltage-Min :

100 V

Drain to Source Voltage (Vdss) :

100 V

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Technology :

MOSFET (Metal Oxide)

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Number of Terminals :

4

Series :

SIPMOS®

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4