2N2219
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- Mfr.Part #
- 2N2219
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO39
- Stock
- 39,802
- In Stock ：
- 39,802
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 800mW
- Collector Base Voltage (VCBO) :
- 75V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Max Power Dissipation :
- 800mW
- Mount :
- Through Hole
- Max Collector Current :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Bulk
- Min Operating Temperature :
- -55°C
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Supplier Device Package :
- TO-39 (TO-205AD)
- Current - Collector Cutoff (Max) :
- 10nA
- Current - Collector (Ic) (Max) :
- 800mA
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity :
- NPN
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Max Operating Temperature :
- 200°C
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 800mW
- Operating Temperature :
- -55°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- 2N2219
NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N2219A Applications
There are a lot of Microsemi Corporation
2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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