
2N4001

- Mfr.Part #
- 2N4001
- Manufacturer
- General Semiconductor
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS 100V 1A TO5
- Stock
- 44,418





- In Stock :
- 44,418
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- Manufacturer :
- General Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Supplier Device Package :
- TO-5
- Power - Max :
- 15 W
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 1 A
- Package :
- Bulk
- Operating Temperature :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA, 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Frequency - Transition :
- 40MHz
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Type :
- -
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 2μA (ICBO)
- Datasheets
- 2N4001
- - 2μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
2N4001 Overview
In this device, the DC current gain is 40 @ 500mA, 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Product comes in the supplier's device package TO-5.There is a 100 V maximal voltage in the device due to collector-emitter breakdown.
2N4001 Features
the DC current gain for this device is 40 @ 500mA, 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-5
2N4001 Applications
There are a lot of General Semiconductor
2N4001 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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