BDV65BG
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- Mfr.Part #
- BDV65BG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A TO247-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage - Rated DC :
- 100V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 125W
- Case Connection :
- COLLECTOR
- Current Rating :
- 10A
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Package / Case :
- TO-247-3
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2002
- hFE Min :
- 1000
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 1mA
- Max Collector Current :
- 10A
- Polarity :
- NPN
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 125W
- Datasheets
- BDV65BG
NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV65BG Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
BDV65BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
BDV65BG Applications
There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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