BUK7105-40ATE,118

- Mfr.Part #
- BUK7105-40ATE,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A SOT426
- Stock
- 42,605





- In Stock :
- 42,605
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Max Dual Supply Voltage :
- 40V
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Pin Count :
- 5
- ECCN Code :
- EAR99
- Rise Time :
- 115ns
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 110 ns
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1460 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 50A, 10V
- Drain to Source Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Published :
- 2008
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 272W Tc
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 155A
- Turn-Off Delay Time :
- 155 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Power Dissipation :
- 272W
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 620A
- Number of Pins :
- 5
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G4
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- FET Feature :
- Temperature Sensing Diode
- Turn On Delay Time :
- 35 ns
- Datasheets
- BUK7105-40ATE,118

N-Channel Tape & Reel (TR) 5m Ω @ 50A, 10V ±20V 4500pF @ 25V 118nC @ 10V TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
BUK7105-40ATE,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1460 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 155 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 620A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 35 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7105-40ATE,118 Features
the avalanche energy rating (Eas) is 1460 mJ
a continuous drain current (ID) of 155A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 155 ns
based on its rated peak drain current 620A.
BUK7105-40ATE,118 Applications
There are a lot of Nexperia USA Inc.
BUK7105-40ATE,118 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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