BUK7108-40AIE,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

JESD-30 Code :

R-PSSO-G4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.008Ohm

Power Dissipation-Max :

221W Tc

ECCN Code :

EAR99

Package / Case :

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

Current Sensing

Avalanche Energy Rating (Eas) :

630 mJ

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101, TrenchMOS™

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

468A

FET Type :

N-Channel

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

8m Ω @ 50A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

75A

Pin Count :

5

JESD-609 Code :

e3

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.75

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Terminal Finish :

Tin (Sn)