BUK7107-55AIE,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

460 mJ

Rds On (Max) @ Id, Vgs :

7m Ω @ 50A, 10V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

159 ns

Number of Elements :

1

Rise Time :

115ns

Number of Pins :

5

Continuous Drain Current (ID) :

75A

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Number of Terminations :

4

Contact Plating :

Tin

Package / Case :

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

ECCN Code :

EAR99

Power Dissipation :

272W

Series :

Automotive, AEC-Q101, TrenchMOS™

Drain to Source Breakdown Voltage :

55V

Drain-source On Resistance-Max :

0.007Ohm

Radiation Hardening :

No

Fall Time (Typ) :

111 ns

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Feature :

Current Sensing

JESD-30 Code :

R-PSSO-G4

Pin Count :

5

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Power Dissipation-Max :

272W Tc

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

36 ns