BUK7107-40ATC,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

5.7μs

Vgs(th) (Max) @ Id :

4V @ 1mA

Contact Plating :

Tin

FET Feature :

Temperature Sensing Diode

Drain to Source Breakdown Voltage :

40V

Series :

Automotive, AEC-Q101, TrenchMOS™

Turn-Off Delay Time :

8.9 μs

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-30 Code :

R-PSSO-G4

Number of Pins :

5

Drain-source On Resistance-Max :

0.007Ohm

Package / Case :

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

2 μs

Continuous Drain Current (ID) :

140A

Power Dissipation-Max :

272W Tc

Surface Mount :

yes

Terminal Form :

Gull wing

Fall Time (Typ) :

6.8 μs

Max Dual Supply Voltage :

40V

Radiation Hardening :

No

Pin Count :

5

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

1400 mJ

Rds On (Max) @ Id, Vgs :

7m Ω @ 50A, 10V

Element Configuration :

Single

Vgs (Max) :

±20V

Number of Elements :

1

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Number of Terminations :

4

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

JESD-609 Code :

e3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 10V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Power Dissipation :

272W

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel