BUK7107-55ATE,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

5

Radiation Hardening :

No

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

36 ns

Vgs (Max) :

±20V

Max Dual Supply Voltage :

55V

Continuous Drain Current (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Pin Count :

5

Number of Elements :

1

Drain to Source Breakdown Voltage :

55V

Number of Terminations :

4

Power Dissipation-Max :

272W Tc

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.007Ohm

Package / Case :

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

111 ns

FET Type :

N-Channel

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

460 mJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Turn-Off Delay Time :

159 ns

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G4

Transistor Application :

SWITCHING

Rise Time :

115ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

7m Ω @ 50A, 10V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Power Dissipation :

272W

Drain Current-Max (Abs) (ID) :

140A

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

FET Feature :

Temperature Sensing Diode

Gate to Source Voltage (Vgs) :

20V