MJ11030

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

300W

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 25A 5V

JESD-609 Code :

e0

Polarity :

NPN

Number of Elements :

1

Peak Reflow Temperature (Cel) :

240

Collector Emitter Saturation Voltage :

2.5V

Voltage - Rated DC :

90V

Terminal Finish :

Tin/Lead (Sn/Pb)

Lead Free :

Contains Lead

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 500mA, 50A

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

3.5V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

BOTTOM

Number of Terminations :

2

Published :

2008

Transistor Type :

NPN - Darlington

Surface Mount :

No

Transistor Application :

AMPLIFIER

Reach Compliance Code :

not_compliant

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Collector Base Voltage (VCBO) :

90V

Pin Count :

2

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Current Rating :

50A

Collector Emitter Breakdown Voltage :

90V

Current - Collector Cutoff (Max) :

2mA

Number of Pins :

2

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tray

Operating Temperature :

-55°C~200°C TJ

Terminal Form :

PIN/PEG

Package / Case :

TO-204AE

Case Connection :

COLLECTOR

Max Collector Current :

50A