NTE2360

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max :

300 mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Frequency - Transition :

200 MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Collector-Emitter Voltage-Max :

50 V

Terminal Form :

THROUGH-HOLE

Package :

Bag

Polarity/Channel Type :

PNP

Reach Compliance Code :

Unknown

Transistor Type :

PNP - Pre-Biased

JESD-30 Code :

O-PBCY-T3

Resistor - Base (R1) :

47 kOhms

Series :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Power Dissipation-Max (Abs) :

0.3 W

DC Current Gain-Min (hFE) :

50

Number of Terminals :

3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Collector Current-Max (IC) :

0.1 A

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500nA

Package Shape :

Round

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Surface Mount :

No

Resistor - Emitter Base (R2) :

47 kOhms

ECCN Code :

EAR99

Manufacturer :

NTE Electronics

Supplier Device Package :

TO-92S

Package / Case :

TO-226-3, TO-92-3 Short Body

Subcategory :

BIP General Purpose Small Signal

Pin Count :

3

Product Status :

Active

Voltage - Collector Emitter Breakdown (Max) :

50 V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

100 mA