NTE2429
- Mfr.Part #
- NTE2429
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89
- Stock
- 1,177
- In Stock :
- 1,177
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Current (DC) :
- 1(A)
- Package Shape :
- RECTANGULAR
- Emitter-Base Voltage :
- 5(V)
- Supplier Device Package :
- SOT-89
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Power Dissipation :
- 1(W)
- Frequency :
- 100(MHz)
- Configuration :
- Single
- Operating Temp Range :
- -65C to 150C
- Power Dissipation-Max (Abs) :
- 1 W
- Subcategory :
- Other Transistors
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA, 5V
- Power - Max :
- 1 W
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Collector-Emitter Voltage-Max :
- 80 V
- Reach Compliance Code :
- Unknown
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Rad Hardened :
- No
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 1 A
- JESD-30 Code :
- R-PSSO-F3
- Transistor Polarity :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Package :
- Bag
- DC Current Gain :
- 30
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Series :
- -
- Operating Temperature Classification :
- Military
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Operating Temperature :
- 150°C (TJ)
- Transistor Type :
- PNP
- Category :
- Bipolar Power
- Mounting :
- Surface Mount
- Terminal Form :
- Flat
- Number of Terminals :
- 3
- Number of Elements :
- 1
- DC Current Gain-Min (hFE) :
- 50
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Output Power :
- Not Required(W)
- Pin Count :
- 3 +Tab
- Surface Mount :
- yes
- HTS Code :
- 8541.29.00.75
- Package / Case :
- TO-243AA
- Transistor Application :
- SWITCHING
- Collector-Base Voltage :
- 90(V)
- Collector Current-Max (IC) :
- 1 A
- Package Type :
- SOT-89
- Manufacturer :
- NTE Electronics
- Datasheets
- NTE2429

PNP 150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-243AA Surface Mount
NTE2429 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA, 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.This product comes in a SOT-89 device package from the supplier.A maximal collector-emitter voltage setting of 80 V is available.Device displays Collector Emitter Breakdown (80 V maximal voltage).
NTE2429 Features
the DC current gain for this device is 100 @ 100mA, 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of SOT-89
NTE2429 Applications
There are a lot of NTE Electronics, Inc
NTE2429 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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