NTE254

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

40 W

Reach Compliance Code :

Unknown

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A, 3V

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

80 V

Number of Elements :

1

Qualification Status :

Not Qualified

Supplier Device Package :

TO-126

Package :

Bag

Power - Max :

40 W

Number of Terminals :

3

Package Shape :

RECTANGULAR

Polarity/Channel Type :

PNP

Subcategory :

Other Transistors

Manufacturer :

NTE Electronics

DC Current Gain-Min (hFE) :

100

Terminal Form :

Wire

Terminal Position :

Single

Frequency - Transition :

-

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Transistor Type :

PNP - Darlington

ECCN Code :

EAR99

Power Dissipation Ambient-Max :

40 W

Transistor Element Material :

SILICON

Operating Temperature :

-65°C ~ 150°C (TJ)

Current - Collector Cutoff (Max) :

100μA

Package / Case :

TO-225AA, TO-126-3

JEDEC-95 Code :

TO-126

JESD-30 Code :

R-PSFM-W3

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Surface Mount :

No

Current - Collector (Ic) (Max) :

4 A

Configuration :

Darlington

Series :

-

Collector Current-Max (IC) :

4 A

Collector-Emitter Voltage-Max :

80 V