NTE285

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

150 W

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 2A, 5V

ECCN Code :

EAR99

Number of Elements :

1

Collector Current (DC) :

16(A)

Polarity/Channel Type :

PNP

Collector Current-Max (IC) :

16 A

Terminal Position :

BOTTOM

Voltage - Collector Emitter Breakdown (Max) :

180 V

Package :

Bag

DC Current Gain-Min (hFE) :

70

Frequency :

6(MHz)

Transistor Element Material :

SILICON

Power Dissipation Ambient-Max :

150 W

Number of Terminals :

2

JESD-30 Code :

O-MBFM-P2

Emitter-Base Voltage :

5(V)

Output Power :

Not Required(W)

Operating Temperature Classification :

Military

Case Connection :

COLLECTOR

Frequency - Transition :

6MHz

Transistor Polarity :

PNP

Collector-Emitter Voltage-Max :

180 V

Mounting Type :

Through Hole

Transistor Type :

PNP

Reach Compliance Code :

Unknown

Subcategory :

Other Transistors

Package Shape :

Round

Package Type :

TO-3

Configuration :

Single

Series :

-

Category :

Bipolar Power

Collector-Base Voltage :

180(V)

Current - Collector (Ic) (Max) :

16 A

Supplier Device Package :

TO-3

Operating Temp Range :

-65C to 150C

Vce Saturation (Max) @ Ib, Ic :

3V @ 1A, 10A

Package / Case :

TO-204AA, TO-3

Transistor Application :

AMPLIFIER

Mounting :

Through Hole

Current - Collector Cutoff (Max) :

100µA (ICBO)

Operating Temperature :

150°C (TJ)

JEDEC-95 Code :

TO-3

Power Dissipation :

150(W)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

2 +Tab

Product Status :

Active

Power - Max :

150 W

Qualification Status :

Not Qualified

Terminal Form :

PIN/PEG

Rad Hardened :

No

Surface Mount :

No

Manufacturer :

NTE Electronics