PD57002-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

10mA

Max Power Dissipation :

4.75W

Mount :

Surface Mount

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Terminal Position :

Dual

Continuous Drain Current (ID) :

250mA

Base Part Number :

PD57002

Min Breakdown Voltage :

65V

Package / Case :

PowerSO-10 Exposed Bottom Pad

Power Dissipation :

4.75W

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

JESD-609 Code :

e3

Frequency :

960MHz

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

250

Case Connection :

SOURCE

Voltage - Test :

28V

Voltage - Rated DC :

65V

Pin Count :

10

Number of Terminations :

2

Drain to Source Breakdown Voltage :

65V

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-G2

Current Rating :

250mA

Max Output Power :

2W

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

65V

Terminal Finish :

Matte Tin (Sn) - annealed

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

0.25A

Power Gain :

15dB

ECCN Code :

EAR99

Transistor Type :

LDMOS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Operating Temperature :

165°C

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel