PD57002S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

4.75W

Mount :

Surface Mount

Package / Case :

PowerSO-10 Exposed Bottom Pad

Number of Elements :

1

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

65V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Frequency :

960MHz

Number of Pins :

4

Voltage - Test :

28V

Qualification Status :

Not Qualified

Max Output Power :

2W

Power Dissipation :

4.75W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

10

Max Operating Temperature :

165°C

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gain :

15dB

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Drain to Source Breakdown Voltage :

65V

Current - Test :

10mA

Gate to Source Voltage (Vgs) :

20V

Current Rating :

250mA

Transistor Type :

LDMOS

Drain Current-Max (Abs) (ID) :

0.25A

Base Part Number :

PD57002

Element Configuration :

Single

Min Operating Temperature :

-65°C

Number of Terminations :

2

Continuous Drain Current (ID) :

250mA

Packaging :

Tube

Additional Feature :

High Reliability

JESD-30 Code :

R-PDSO-F2

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99