PD57002S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Terminal Form :

Flat

Power Dissipation :

4.75W

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

PD57002

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Max Output Power :

2W

Drain to Source Voltage (Vdss) :

65V

Current - Test :

10mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Case Connection :

SOURCE

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-F2

Package / Case :

PowerSO-10 Exposed Bottom Pad

Max Power Dissipation :

4.75W

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.25A

Transistor Application :

AMPLIFIER

Gain :

15dB

Min Operating Temperature :

-65°C

Element Configuration :

Single

Additional Feature :

High Reliability

Transistor Type :

LDMOS

Current Rating :

250mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Test :

28V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Drain to Source Breakdown Voltage :

65V

Continuous Drain Current (ID) :

250mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

4

Pin Count :

10

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Operating Temperature :

165°C

Frequency :

960MHz

Qualification Status :

Not Qualified