PD57006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Operating Temperature :

165°C

Current Rating :

1A

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

65V

Transistor Application :

AMPLIFIER

Transistor Type :

LDMOS

Length :

7.5mm

Radiation Hardening :

No

Element Configuration :

Single

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Weight :

4.535924g

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

1A

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Voltage - Test :

28V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Case Connection :

SOURCE

Power Gain :

15dB

Current - Test :

70mA

Number of Terminations :

2

Drain to Source Breakdown Voltage :

65V

Packaging :

Tube

Base Part Number :

PD57006

Drain Current-Max (Abs) (ID) :

1A

Terminal Form :

Gull wing

Number of Elements :

1

Peak Reflow Temperature (Cel) :

250

Number of Pins :

3

Max Power Dissipation :

20W

REACH SVHC :

No SVHC

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G2

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Pin Count :

10

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Frequency :

945MHz

Max Output Power :

6W

Min Breakdown Voltage :

65V

Power Dissipation :

20W

Input Capacitance :

27pF

Width :

9.4mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-65°C

Height :

3.5mm