PD57018-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Elements :

1

Contact Plating :

Tin

Base Part Number :

PD57018

Min Breakdown Voltage :

65V

Width :

9.4mm

Power Gain :

16.5dB

Max Output Power :

18W

Factory Lead Time :

25 Weeks

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

7.5mm

Current - Test :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Voltage - Rated DC :

65V

ECCN Code :

EAR99

Frequency :

945MHz

Lead Free :

Lead Free

Element Configuration :

Single

Drain to Source Breakdown Voltage :

65V

Radiation Hardening :

No

Additional Feature :

High Reliability

JESD-609 Code :

e3

Current Rating :

2.5A

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Pin Count :

10

Voltage - Test :

28V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Resistance :

760mOhm

Terminal Form :

Gull wing

Min Operating Temperature :

-65°C

Transistor Type :

LDMOS

Terminal Position :

Dual

Power Dissipation :

31.7W

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

165°C

Continuous Drain Current (ID) :

2.5A

Peak Reflow Temperature (Cel) :

250

Package / Case :

PowerSO-10 Exposed Bottom Pad

Height :

3.5mm

JESD-30 Code :

R-PDSO-G2

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Case Connection :

SOURCE

Max Power Dissipation :

31.7W

Drain to Source Voltage (Vdss) :

65V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount