PD57006TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain Current-Max (Abs) (ID) :

1A

Current - Test :

70mA

Max Operating Temperature :

165°C

Number of Elements :

1

Continuous Drain Current (ID) :

1A

Transistor Type :

LDMOS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

Min Operating Temperature :

-65°C

Drain to Source Voltage (Vdss) :

65V

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

not_compliant

Base Part Number :

PD57006

JESD-609 Code :

e3

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

20W

Frequency :

945MHz

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Pin Count :

10

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Surface Mount

Gain :

15dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

65V

Terminal Position :

Dual

ECCN Code :

EAR99

Terminal Form :

Gull wing

Max Power Dissipation :

20W

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-G2

Max Output Power :

6W

Voltage - Test :

28V

Peak Reflow Temperature (Cel) :

250

Current Rating :

1A