2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 60V 115MA SOT23
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Length :
- 2.92mm
- Element Configuration :
- Single
- Power Dissipation-Max :
- 200mW Ta
- Number of Elements :
- 1
- Height :
- 930μm
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Resistance :
- 5.3Ohm
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- Rds On Max :
- 7.5 Ω
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 1.2Ohm
- Dual Supply Voltage :
- 60V
- Continuous Drain Current (ID) :
- 115mA
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- 2.1 V
- Threshold Voltage :
- 2.1V
- Input Capacitance :
- 50pF
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Current :
- 115mA
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Current Rating :
- 115mA
- Radiation Hardening :
- No
- Base Part Number :
- 2N7002
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Pins :
- 3
- Width :
- 3.05mm
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Datasheets
- 2N7002

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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