BUK7K5R1-30E,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Power - Max :

68W

Operating Temperature :

-55°C~175°C TJ

Rise Time :

12.5ns

Max Power Dissipation :

68W

Continuous Drain Current (ID) :

40A

Package / Case :

SOT-1205, 8-LFPAK56

Contact Plating :

Tin

Number of Terminations :

6

Pin Count :

8

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 10A, 10V

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

30V

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

31.1nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Number of Pins :

8

Number of Elements :

2

Drain-source On Resistance-Max :

0.0051Ohm

Turn On Delay Time :

9.5 ns

Turn-Off Delay Time :

19.5 ns

Reference Standard :

AEC-Q101; IEC-60134

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2352pF @ 25V

Transistor Element Material :

SILICON

Published :

2013

Number of Channels :

2

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G6

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

13 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Element Configuration :

Dual

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE