BUK7Y20-30B115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Rds On (Max) @ Id, Vgs :

20m Ω @ 20A, 10V

Lead Free :

Lead Free

Rise Time :

18ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

39.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

30V

RoHS Status :

ROHS3 Compliant

Published :

2010

Radiation Hardening :

No

Number of Pins :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SC-100, SOT-669

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Terminations :

4

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Terminal Position :

Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.02Ohm

JEDEC-95 Code :

MO-235

Continuous Drain Current (ID) :

39.5A

Input Capacitance (Ciss) (Max) @ Vds :

688pF @ 25V

Contact Plating :

Tin

Terminal Form :

Gull wing

Turn On Delay Time :

9.5 ns

Pulsed Drain Current-Max (IDM) :

158A

Turn-Off Delay Time :

20.5 ns

Power Dissipation-Max :

59W Tc

Vgs (Max) :

±20V

Transistor Application :

SWITCHING