PD57060TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Breakdown Voltage :

65V

Transistor Type :

LDMOS

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Gain :

14.3dB

JESD-609 Code :

e3

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

not_compliant

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

65V

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

250

Max Operating Temperature :

165°C

Number of Terminations :

2

Power Dissipation :

79W

Continuous Drain Current (ID) :

7A

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerSO-10 Exposed Bottom Pad

Case Connection :

SOURCE

Current - Test :

100mA

Factory Lead Time :

25 Weeks

Max Power Dissipation :

79W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

10

Frequency :

945MHz

Drain Current-Max (Abs) (ID) :

7A

Base Part Number :

PD57060

Min Operating Temperature :

-65°C

Operating Mode :

ENHANCEMENT MODE

Current Rating :

7A

JESD-30 Code :

R-PDSO-G2

Number of Elements :

1

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Voltage - Test :

28V

Max Output Power :

60W

Terminal Form :

Gull wing