BSS100
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- Mfr.Part #
- BSS100
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 220MA TO92-3
- Stock
- 16,238
- In Stock ：
- 16,238
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Continuous Drain (Id) @ 25°C :
- 220mA Ta
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 220mA, 10V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 2nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Datasheets
- BSS100
N-Channel Bulk 6 Ω @ 220mA, 10V 60pF @ 25V 2nC @ 10V 100V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BSS100 Description
This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. It has been specifically designed to minimize on-state resistance and offer enhanced switching performance in this extremely high density technology. This product is best suited for low voltage, low current uses like power MOSFET gate drivers, small servo motor controls, and other switching applications.
BSS100 Features
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BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V.
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BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V
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High density cell design for extremely low RDS(ON).
-
Voltage controlled small signal switch.
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Rugged and reliable
BSS100 Applications
-
Power Management
-
Consumer Electronics
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Portable Devices
-
Industrial
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