BSS119L6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mount :

Surface Mount

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Pbfree Code :

yes

Feedback Cap-Max (Crss) :

4.1 pF

Drain Current-Max (Abs) (ID) :

0.17A

Drain-source On Resistance-Max :

6Ohm

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Published :

2002

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Form :

Gull wing

Number of Terminations :

3

HTS Code :

8541.21.00.95

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2.3V @ 50μA

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Power Dissipation-Max :

360mW Ta

Number of Elements :

1

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

170mA