BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170MA SOT23-3
- Stock
- 31,754
- In Stock :
- 31,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 1.7V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Continuous Drain Current (ID) :
- 170mA
- Voltage :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Length :
- 2.92mm
- Nominal Vgs :
- 1.7 V
- Voltage - Rated DC :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 360mW
- Height :
- 1.11mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 17 ns
- Input Capacitance :
- 73pF
- Published :
- 2003
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Rds On Max :
- 6 Ω
- Fall Time (Typ) :
- 9 ns
- Resistance :
- 6Ohm
- Power Dissipation-Max :
- 360mW Ta
- Turn On Delay Time :
- 1.7 ns
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Current Rating :
- 170mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- SOT-23-3
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Dual Supply Voltage :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Width :
- 1.3mm
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Rise Time :
- 9ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 1.2Ohm
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 100V
- Base Part Number :
- BSS123
- Current :
- 15A
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Number of Channels :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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