BSS123

- Mfr.Part #
- BSS123
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170MA SOT23-3
- Stock
- 31,754





- In Stock :
- 31,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 6Ohm
- Current :
- 15A
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Input Capacitance :
- 73pF
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 1.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Current Rating :
- 170mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SOT-23-3
- Nominal Vgs :
- 1.7 V
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- Threshold Voltage :
- 1.7V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Power Dissipation-Max :
- 360mW Ta
- Voltage - Rated DC :
- 100V
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Voltage :
- 100V
- Turn On Delay Time :
- 1.7 ns
- Mount :
- Surface Mount
- Height :
- 1.11mm
- Base Part Number :
- BSS123
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Continuous Drain Current (ID) :
- 170mA
- Turn-Off Delay Time :
- 17 ns
- Published :
- 2003
- Fall Time (Typ) :
- 9 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 360mW
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Max Junction Temperature (Tj) :
- 150°C
- Rise Time :
- 9ns
- Drain to Source Breakdown Voltage :
- 100V
- Rds On Max :
- 6 Ω
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Drain to Source Resistance :
- 1.2Ohm
- Dual Supply Voltage :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Length :
- 2.92mm
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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