BSS119NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

FET Type :

N-Channel

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

100V

JESD-609 Code :

e3

Number of Terminations :

3

Height :

1.1mm

Width :

1.3mm

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Lead Free :

Lead Free

Power Dissipation-Max :

500mW Ta

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

Vgs(th) (Max) @ Id :

2.3V @ 13μA

Number of Pins :

3

Drain-source On Resistance-Max :

6Ohm

Input Capacitance (Ciss) (Max) @ Vds :

20.9pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

3.3ns

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Length :

2.9mm

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

190mA

ECCN Code :

EAR99

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

Contact Plating :

Tin

Series :

OptiMOS™

Halogen Free :

Halogen Free

Turn On Delay Time :

2.7 ns

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

18.8 ns

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

500mW

Mounting Type :

Surface Mount

Published :

2002

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Turn-Off Delay Time :

7 ns