BSS119NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rise Time :

3.3ns

Vgs(th) (Max) @ Id :

2.3V @ 13μA

Drain Current-Max (Abs) (ID) :

0.19A

Number of Terminations :

3

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

6Ohm

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Terminal Position :

Dual

ECCN Code :

EAR99

Power Dissipation-Max :

500mW Ta

Factory Lead Time :

10 Weeks

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Continuous Drain Current (ID) :

190mA

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

Published :

2012

Package / Case :

TO-236-3, SC-59, SOT-23-3

Reference Standard :

AEC-Q101

Input Capacitance (Ciss) (Max) @ Vds :

20.9pF @ 25V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

Series :

OptiMOS™