BSS119E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

0.17A

Qualification Status :

Not Qualified

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Vgs(th) (Max) @ Id :

2.3V @ 50μA

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Terminal Form :

Gull wing

Rise Time :

5ns

Number of Elements :

1

HTS Code :

8541.21.00.95

Lead Free :

Contains Lead

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Series :

SIPMOS®

Continuous Drain Current (ID) :

170mA

Voltage - Rated DC :

100V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Feedback Cap-Max (Crss) :

6 pF

Drain-source On Resistance-Max :

10Ohm

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Terminal Position :

Dual

Current Rating :

170mA

Power Dissipation-Max :

360mW Ta

Transistor Element Material :

SILICON

Published :

2000

Mount :

Surface Mount

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Mounting Type :

Surface Mount