BSS119L6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Drain Current-Max (Abs) (ID) :

0.17A

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Mount :

Surface Mount

Published :

2002

Drain-source On Resistance-Max :

6Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

4.1 pF

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Continuous Drain Current (ID) :

170mA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Series :

SIPMOS®

FET Type :

N-Channel

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

360mW Ta

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.3V @ 50μA

Number of Terminations :

3