BSS119N H7796

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

20.9 pF @ 25 V

Supplier Device Package :

PG-SOT23-3-5

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

0.6 nC @ 10 V

Vgs(th) (Max) @ Id :

2.3V @ 13μA

FET Feature :

-

Rds On (Max) @ Id, Vgs :

6Ohm @ 190mA, 10V

Product Status :

Active

Drain to Source Voltage (Vdss) :

100 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

500mW (Ta)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Series :

OptiMOS?

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

190mA (Ta)

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V