
BSS123

- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 N 100V 0.2A Transistors
- Stock
- 15,000





- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 170mA
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1
- Rds On Max :
- 6 Ω
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain to Source Voltage (Vdss) :
- 100V
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Threshold Voltage :
- 1.7V
- Voltage :
- 100V
- Base Part Number :
- BSS123
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 9ns
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Drain to Source Resistance :
- 1.2Ohm
- Input Capacitance :
- 73pF
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 170mA
- Current :
- 15A
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Width :
- 1.3mm
- Fall Time (Typ) :
- 9 ns
- Turn-Off Delay Time :
- 17 ns
- Power Dissipation-Max :
- 360mW Ta
- Resistance :
- 6Ohm
- Max Junction Temperature (Tj) :
- 150°C
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- SOT-23-3
- Dual Supply Voltage :
- 100V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Published :
- 2003
- Length :
- 2.92mm
- FET Type :
- N-Channel
- Nominal Vgs :
- 1.7 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Height :
- 1.11mm
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation :
- 360mW
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 1.7 ns
- Datasheets
- BSS123
N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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